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'Epitaxy' implies controlled growth of single crystalline thin films of a particular material on a given substrate witha definite crystallographic relationship between the growing film and the substrate. Such type of growth is extremelyimportant in designing novel optical and electronic devices such as high brightness LEDs, Lasers, detectors, highspeed transistors etc. Layers of different compound semiconductors are employed in such devices which are grownon top of one another with extreme precision in composition and thickness and needs in-depth understanding of theepitaxial process.
The purpose of this talk is to give a basic tutorial description of the important fundamental aspects of differentepitaxial process such as MBE and MOVPE as well as latest developments for both III-V and II-VI semiconductors andapplication of these processes to the growth of different low dimensional quantum structures. The emphasis is on acoherent description of the overall process including the chemistry of the precursor molecules, the thermodynamics,hydrodynamic and kinetic aspects of epitaxy. Finally, the growth and characterization of specific materials,nanostructures, and latest devices will be discussed.
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